Heterogeneous integration of ReRAM crossbars in 180nm CMOS BEoL process

This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180 nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and characterized. A low-cost integration method is applied to the developed TaOx-based memories to achieve chip level ReRAM–CMOS integration. The integrated memory devices show working voltages compatible with CMOS circuits operations. Measured SET and RESET voltages of the ReRAM integrated cells are 1 V and +1.3 V, respectively, demonstrating suitability for low-voltage applications. 2015 Elsevier B.V. All rights reserved.